Negative capacitance of ZnGa2Se4/Si nano-heterojunction diode

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dc.contributor.authorYahia, I. S.
dc.contributor.authorSakr, G. B.
dc.contributor.authorShenouda, S. S.
dc.contributor.authorFadel, M.
dc.contributor.authorFouad, S. S.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:31:56Z
dc.date.issued2013
dc.departmentFırat Üniversitesi
dc.description.abstractThe negative capacitance (NC) behavior in p-ZnGa2Se4/n-Si nano-crystalline HJD was characterized by admittance-voltage method. The C-V, G-V and R (s) -V for the studied diode were analysed in the frequency range of 1-5 MHz and in the temperature range of 303-423 K. The capacitance and conductance plots were interpreted in terms of interface states and series resistance. The C-V and G/omega-V plots exhibit a pounced peak due to the interface states and the series resistance effects. The negative capacitance behavior in the studied diode can be explained in terms of the transient currents.
dc.identifier.doi10.1007/s00339-013-7739-7
dc.identifier.endpage282
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue2
dc.identifier.orcid0000-0003-0827-1764
dc.identifier.orcid0000-0002-4721-268X
dc.identifier.orcid0000-0002-2907-1502
dc.identifier.orcid0000-0002-3156-471X
dc.identifier.scopus2-s2.0-84880319710
dc.identifier.scopusqualityQ2
dc.identifier.startpage275
dc.identifier.urihttps://doi.org/10.1007/s00339-013-7739-7
dc.identifier.urihttps://hdl.handle.net/11508/56448
dc.identifier.volume112
dc.identifier.wosWOS:000321784500007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectNonlinear-Optical Properties
dc.subjectLight-Emitting-Diodes
dc.subjectImpedance Spectroscopy
dc.subjectElectrical-Properties
dc.subjectSeries Resistance
dc.subjectSchottky Diodes
dc.subjectThin-Films
dc.subjectC-V
dc.subjectFrequency
dc.subjectInterface
dc.titleNegative capacitance of ZnGa2Se4/Si nano-heterojunction diode
dc.typeArticle

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