Negative capacitance of ZnGa2Se4/Si nano-heterojunction diode

Abstract

The negative capacitance (NC) behavior in p-ZnGa2Se4/n-Si nano-crystalline HJD was characterized by admittance-voltage method. The C-V, G-V and R (s) -V for the studied diode were analysed in the frequency range of 1-5 MHz and in the temperature range of 303-423 K. The capacitance and conductance plots were interpreted in terms of interface states and series resistance. The C-V and G/omega-V plots exhibit a pounced peak due to the interface states and the series resistance effects. The negative capacitance behavior in the studied diode can be explained in terms of the transient currents.