Studies of interface structures of W films grown on patterned and bare Si(100) by TEM

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dc.contributor.authorAtici, Y
dc.date.accessioned2026-08-12T17:25:59Z
dc.date.issued1997
dc.departmentFırat Üniversitesi
dc.description.abstractW films were grown onto patterned n(+)-Si(100) and bare Si(100) wafers by low pressure chemical vapour deposition (LPCVD) at 230-280 degrees C. The films were investigated by transmission electron microscopy (TEM). The cross-sectional TEM samples of W/Si(100) exhibited a fine scale interface roughness, which was attributed to the surface preparation. Irregular W plug structures were observed depending on the predeposition procedures. It was observed that an insufficient deposition of W films on the contact surface leads to the presence of aluminium around and underneath the plugs. This was observed by energy dispersive X-ray spectrometry (EDX). A study, using conventional electron diffraction, confirmed that no silicides formed at the interfaces of W-bare Si(100) wafers.
dc.identifier.doi10.1007/s003390050584
dc.identifier.endpage314
dc.identifier.issn0947-8396
dc.identifier.issue3
dc.identifier.scopus2-s2.0-0031232734
dc.identifier.scopusqualityQ2
dc.identifier.startpage307
dc.identifier.urihttps://doi.org/10.1007/s003390050584
dc.identifier.urihttps://hdl.handle.net/11508/54634
dc.identifier.volume65
dc.identifier.wosWOS:A1997XW32300015
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Verlag
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectChemical Vapor-Deposition
dc.subjectTungsten
dc.titleStudies of interface structures of W films grown on patterned and bare Si(100) by TEM
dc.typeArticle

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