Electrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode

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dc.contributor.authorGupta, R. K.
dc.contributor.authorCavas, M.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorGafer, Z. H.
dc.contributor.authorEl-Tantawy, F.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:31:49Z
dc.date.issued2013
dc.departmentFırat Üniversitesi
dc.description.abstractA p-type transparent semiconductor, CuFeO2 was synthesized by sol gel method to fabricate metal/transparent conducting oxide-semiconductor (MTCOS) Schottky photodiode. The optical and electrical properties of the CuFeO2 film and Al/p-CuFeO2/p-Si/Al diode were studied. The optical band gap of the CuFeO2 film was calculated using optical data and was found to be 2.82 eV. The diode exhibits a photoconducting behavior with a high photosensitivity value of 1.31 x 10(3) under 100 mW/cm(2). The ideality factor and barrier height of the diode were obtained to be 1.67 +/- 0.2 and 0.55 +/- 0.01 eV, respectively. The interface states have been used to explain the results obtained in this study. It is evaluated that MTCOS photodiode can be used for optoelectronics applications. (C) 2013 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.solener.2013.03.002
dc.identifier.endpage6
dc.identifier.issn0038-092X
dc.identifier.orcid0000-0002-0130-1644
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-84875776931
dc.identifier.scopusqualityQ1
dc.identifier.startpage1
dc.identifier.urihttps://doi.org/10.1016/j.solener.2013.03.002
dc.identifier.urihttps://hdl.handle.net/11508/56407
dc.identifier.volume92
dc.identifier.wosWOS:000319644500001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofSolar Energy
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectCuFeO2
dc.subjectBand gap
dc.subjectSchottky diode
dc.subjectSol-gel
dc.subjectJunction properties
dc.subjectCapacitance
dc.titleElectrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode
dc.typeArticle

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