Low leakage current of CdSe quantum dots/Si composite structure and its performance for photodiode and solar cell

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dc.contributor.authorSoylu, M.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorEl-Tantawy, E.
dc.contributor.authorFarooq, W. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:49:00Z
dc.date.issued2016
dc.departmentFırat Üniversitesi
dc.description.abstractThe CdSe quantum dots were deposited on p type Si(100) substrate by spin coating process. CdSe quantum dots were selected as the interlayer to reduce the reverse-bias leakage current of heterojunction. Various junction parameters were determined from the current-voltage (I-V) and capacitance voltage (C-V) characteristics. Au/CdSe quantum dots/p-Si structure exhibits a fairly low leakage current density of 4.54 x 10(-9) A/cm(2) and a high rectification ratio of 3.1 x 10(6) at applied electric field of +/- 4V. Furthermore, I-V characteristics under illumination show strong photovoltaic (PV) behavior. These results are attributed to the low interfacial state density and defect density due to CdSe quantum dots at the interface. It is also evaluated that the Au/CdSe quantum dots/p-Si structure can be a potential candidate for photodiode and solar cell applications. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
dc.description.sponsorshipKing Saud University
dc.description.sponsorshipThe authors gratefully acknowledge and thank the Deanship of Scientific Research, King Abdulaziz University (KAU), Jeddah, Saudi Arabia, for the research group Advances in composites, Synthesis and applications. This work is as a result of international collaboration of the group with Prof. F. Yakuphanoglu. Also, this study was supported by King Saud University.
dc.identifier.doi10.1016/j.ceramint.2016.06.136
dc.identifier.endpage14955
dc.identifier.issn0272-8842
dc.identifier.issn1873-3956
dc.identifier.issue13
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-85004154139
dc.identifier.scopusqualityQ1
dc.identifier.startpage14949
dc.identifier.urihttps://doi.org/10.1016/j.ceramint.2016.06.136
dc.identifier.urihttps://hdl.handle.net/11508/61640
dc.identifier.volume42
dc.identifier.wosWOS:000381171600088
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofCeramics International
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectCdSe
dc.subjectLeakage current density, Illumination
dc.subjectElectrical properties
dc.titleLow leakage current of CdSe quantum dots/Si composite structure and its performance for photodiode and solar cell
dc.typeArticle

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