Controlling of semiconductor/metal junction barrier by 5,10,15,20-tetraphenyl-21H,23H-porphine ruthenium(II) carbonyl

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:10:08Z
dc.date.issued2007
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical characteristics of RuP/p-Si/Al junction barrier have been investigated by current-voltage and capacitance-voltage characteristics. A deviation in I-V characteristic of the diode is observed due to effect of series resistance and interfacial layer. RuP/p-Si/Al diode is a metal-interfacial layer-semiconductor type diode with calculated electronic parameters (ideality factor, series resistance and barrier height-, n=1.95, R-s=6.25 k Omega and phi(B)=1.23 eV). The obtained barrier height and ideality factor values of RuP/p-Si/Al diode at the room temperature is significantly larger that that for the conventional Al/p-Si Schottky diode. It is evaluated that RuP organic layer modifies electronic properties of metalsemiconductor devices based on p-Si.
dc.identifier.endpage3654
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue11
dc.identifier.startpage3651
dc.identifier.urihttps://hdl.handle.net/11508/50595
dc.identifier.volume9
dc.identifier.wosWOS:000251435200073
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectmetal-semiconductor contact
dc.subjectorganic semiconductor
dc.subjectseries resistance
dc.titleControlling of semiconductor/metal junction barrier by 5,10,15,20-tetraphenyl-21H,23H-porphine ruthenium(II) carbonyl
dc.typeArticle

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