A Functional Material Based Heterojunction Diode

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dc.contributor.authorEl-Nasser, H. M.
dc.contributor.authorMensah-Darkwa, K.
dc.contributor.authorAl-Senany, Norah
dc.contributor.authorAl-Ghamdi, Ahmed
dc.contributor.authorGupta, R. K.
dc.contributor.authorFarooq, W. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:33:13Z
dc.date.issued2018
dc.departmentFırat Üniversitesi
dc.description.abstractIn this study, the phosphotungstic acid/p-Si diode was fabricated by a drop coating method. The fabricated diode had excellent rectifying properties. The electrical properties of the diode were investigated in the temperature range of 50-400 K. The optical band gap of the phosphotungstic acid film was determined and found to be 3.66 eV. The electrical and photoresponse properties of an Al/p-Si- phosphotungstic acid/Al photodiode were studied. The electronic parameters such as ideality factor (n), barrier height (Phi(B)) and series resistance (R-s) were found to be strongly temperature dependent.
dc.description.sponsorshipInternational Scientific Partnership Program ISPP at King Saud University [0046]
dc.description.sponsorshipThe authors extend their appreciation to the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 0046.
dc.identifier.doi10.1007/s12633-016-9525-6
dc.identifier.endpage746
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue3
dc.identifier.orcid0000-0002-7070-1967
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.scopus2-s2.0-85017457799
dc.identifier.scopusqualityQ1
dc.identifier.startpage737
dc.identifier.urihttps://doi.org/10.1007/s12633-016-9525-6
dc.identifier.urihttps://hdl.handle.net/11508/56935
dc.identifier.volume10
dc.identifier.wosWOS:000431799600008
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectPhosphotungstic acid
dc.subjectPhotodiode
dc.subjectIdeality factor
dc.subjectBarrier height
dc.titleA Functional Material Based Heterojunction Diode
dc.typeArticle

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