The electrical characteristics of thin film transistors with graphene oxide and organic insulators

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dc.contributor.authorKarteri, I.
dc.contributor.authorKaratas, S.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:20Z
dc.date.issued2015
dc.departmentFırat Üniversitesi
dc.description.abstractWe have studied the electrical characteristics of nanographene oxide (n-GO) thin film transistor and n-GO organic thin film transistors with poly(methyl methacrylate) (PMMA) and poly-4-vinylphenol (PVP) as organic insulators. One of the alternate methods to prepare GO is achieved by oxidizing graphite via modified Hummers method. In this study, the GO was synthesized by a modified Hummers method. The graphene oxide thin films with PMMA and PVP were prepared by spin coating the precursor solution on a GO/SiO2 dielectrics bilayer. The graphene oxide thin film transistor was found to exhibit a high mobility of 0.375 cm(2)/V.s. This indicates that n-GO film has a more important effect to fabricate a high mobility n-GO thin film transistor than n-GO based thin film transistor with PMMA and PVP. (C) 2014 Elsevier B.V. All rights reserved.
dc.description.sponsorshipKahramanmaras Sutcu Imam University [2012/2-7D, 2013/4-24M]; National Research Fellowship Programme [TUBITAK-2233]
dc.description.sponsorshipWe would like to thank Kahramanmaras Sutcu Imam University for financial support of the research program. (Project No: 2012/2-7D and 2013/4-24M). This study was also partially supported by TUBITAK-2233 National Research Fellowship Programme.
dc.identifier.doi10.1016/j.synthmet.2014.11.036
dc.identifier.endpage245
dc.identifier.issn0379-6779
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.orcid0000-0001-8913-6753
dc.identifier.scopus2-s2.0-84915814895
dc.identifier.scopusqualityQ1
dc.identifier.startpage241
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2014.11.036
dc.identifier.urihttps://hdl.handle.net/11508/56604
dc.identifier.volume199
dc.identifier.wosWOS:000348954000034
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectGraphene oxide
dc.subjectHummers method
dc.subjectThin film
dc.subjectTransistor
dc.titleThe electrical characteristics of thin film transistors with graphene oxide and organic insulators
dc.typeArticle

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