Extracting parameters from current-voltage characteristics of pentacene field-effect transistor in saturation region

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorMansouri, S.
dc.contributor.authorBourguiga, R.
dc.date.accessioned2026-08-12T17:31:35Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractThe pentacene thin film transistor was fabricated on a SiO2 layer by thermal evaporation method. Using the variable range hopping model (VRH), we have calculated the mobility of carrier charges in saturation region. The electrical parameters, conductance g(ch) and the total resistance R-T, of the pentacene transistor were extracted using a differential method based on first and second numerical derivatives of electrical measurement. The obtained results are in good agreement with the experimental results. (C) 2012 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTurkish Scientific and Technological Research Council of Turkey (TUBITAK) [110T047]
dc.description.sponsorshipThis work was supported by the Turkish Scientific and Technological Research Council of Turkey (TUBITAK) (Project No. 110T047).
dc.identifier.doi10.1016/j.synthmet.2012.04.003
dc.identifier.endpage923
dc.identifier.issn0379-6779
dc.identifier.issue11.Ara
dc.identifier.orcid0000-0001-5394-3174
dc.identifier.scopus2-s2.0-84861150679
dc.identifier.scopusqualityQ1
dc.identifier.startpage918
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2012.04.003
dc.identifier.urihttps://hdl.handle.net/11508/56323
dc.identifier.volume162
dc.identifier.wosWOS:000306044800007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectOrganics TFTs
dc.subjectMobility
dc.subjectModeling
dc.titleExtracting parameters from current-voltage characteristics of pentacene field-effect transistor in saturation region
dc.typeArticle

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