High Photoresponsivity Ru-doped ZnO/p-Si Heterojunction Diodes by the Sol-gel Method

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dc.contributor.authorKaratas, Sukru
dc.contributor.authorEl-Nasser, H. M.
dc.contributor.authorAl-Ghamdi, Ahmed. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:33:11Z
dc.date.issued2018
dc.departmentFırat Üniversitesi
dc.description.abstractThe ruthenium (Ru) doped nanostructure ZnO films were prepared by the sol-gel spin coating method. Undoped and Ru doped ZnO films are formed as fibers. The optical band gaps of undoped, 0.1 at.% and 0.5 at.% Ru doped ZnO films were found to be 3.31, 3.30 and 3.29 eV, respectively. The electrical properties of undoped and Ru-doped ZnO/p-Si heterostructure diodes were investigated under dark and visible light illuminations using current-voltage (I-V) measurements. The diodes exhibit a non-ideal I-V behavior due to the interfacial layer and the series resistance. The electrical parameters such as ideality factors, barrier heights and series resistances obtained from different methods were determined under illumination conditions. The diode having 0.1 at.% Ru doped ZnO exhibited the highest photoresponse of 7.75 x 10(3) under 100 mW/cm(2). The obtained results indicate that the photoresponsivity properties of the ZnO based photodiode can be improved with Ru content.
dc.description.sponsorshipKahramanmaras Sutcu Imam University [2015/3-90M]; King Saud University
dc.description.sponsorshipWe would like to thank Kahramanmaras Sutcu Imam University for financial support of the research program. (Project No: 2015/3-90M). One of the authors thanks King Saud University for financial supporting.
dc.identifier.doi10.1007/s12633-016-9508-7
dc.identifier.endpage658
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue2
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-85015091872
dc.identifier.scopusqualityQ1
dc.identifier.startpage651
dc.identifier.urihttps://doi.org/10.1007/s12633-016-9508-7
dc.identifier.urihttps://hdl.handle.net/11508/56925
dc.identifier.volume10
dc.identifier.wosWOS:000427433100056
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectZinc oxide
dc.subjectThin solid films
dc.subjectSol-gel growth
dc.subjectElectrical properties
dc.titleHigh Photoresponsivity Ru-doped ZnO/p-Si Heterojunction Diodes by the Sol-gel Method
dc.typeArticle

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