Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method

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dc.contributor.authorAlyamani, A.
dc.contributor.authorTataroglu, A.
dc.contributor.authorEl Mir, L.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorDahman, H.
dc.contributor.authorFarooq, W. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:48Z
dc.date.issued2016
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.
dc.description.sponsorshipKing Saud University
dc.description.sponsorshipTwo of the authors thank King Saud University for support.
dc.identifier.doi10.1007/s00339-016-9812-5
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue4
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-84960116404
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-016-9812-5
dc.identifier.urihttps://hdl.handle.net/11508/56767
dc.identifier.volume122
dc.identifier.wosWOS:000372259900038
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer Heidelberg
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectZno Thin-Films
dc.subjectPhotoconducting Properties
dc.subjectLuminescence Properties
dc.subjectElectrical-Properties
dc.subjectOptical-Properties
dc.subjectSi
dc.subjectAl
dc.subjectTransparent
dc.subjectPhotodiode
dc.subjectTemperature
dc.titlePhotoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method
dc.typeArticle

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