The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

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dc.contributor.authorBenouis, C. E.
dc.contributor.authorBenhaliliba, M.
dc.contributor.authorSanchez Juarez, A.
dc.contributor.authorAida, M. S.
dc.contributor.authorChami, F.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:45:55Z
dc.date.issued2010
dc.departmentFırat Üniversitesi
dc.description.abstractThe effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of IZO thin films has been investigated. X-rays diffraction spectra show that the IZO films are polycrystalline of wurtzite structure with preferential orientation of (002) direction. The IZO thin film for doping level of 2% exhibits the lowest resistivity of 6 x 10(-3) (Omega cm) compared to undoped ZnO of 17 (Omega cm). The optical gaps of the IZO thin films were determined using optical transmission spectra and the obtained optical band gap value increases slightly from 3.28 eV to 3.35 eV due to the indium doping. The IZO film indicates a strong photoconductivity with indium doping level. The density of states, traps concentration and relaxation time for the films were calculated using Laplace transform method and these parameters change with In doping level. It is evaluated that In doping has an important effect on the electronic and optical properties of ZnO thin films. (C) 2009 Elsevier B.V. All rights reserved.
dc.description.sponsorshipAlgerian High Level Teaching and Scientific Research Ministry [D 01920080054]
dc.description.sponsorshipThis work is part of a project CNEPRU 2009 financed by the Algerian High Level Teaching and Scientific Research Ministry under Ner. D 01920080054.
dc.identifier.doi10.1016/j.jallcom.2009.10.098
dc.identifier.endpage67
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.issue1.Şub
dc.identifier.orcid0000-0001-8420-1835
dc.identifier.scopus2-s2.0-74249084250
dc.identifier.scopusqualityQ1
dc.identifier.startpage62
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2009.10.098
dc.identifier.urihttps://hdl.handle.net/11508/60872
dc.identifier.volume490
dc.identifier.wosWOS:000274839100026
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectZnO
dc.subjectSpray pyrolysis
dc.subjectIndium doping
dc.subjectPhotoconductivity
dc.titleThe effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films
dc.typeArticle

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