Photodiodes based on graphene oxide-silicon junctions

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dc.contributor.authorPhan, D. -T.
dc.contributor.authorGupta, R. K.
dc.contributor.authorChung, G. -S.
dc.contributor.authorAl-Ghamdi, A. A.
dc.contributor.authorAl-Hartomy, Omar A.
dc.contributor.authorEl-Tantawy, F.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:31:41Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractSchottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was fabricated. The current voltage characteristics of the diode were investigated under dark and various light intensity. It was observed that generated photocurrent of the diode depends on light intensity. Various junction parameters were presented using I-V characteristics. The transient photocurrent measurement indicated that the Al/GO/n-Si/Al diode was very sensitive to illumination. The photocurrent of the diode increases with increase in illumination intensity. The capacitance voltage frequency (C-V-f) measurements indicated that the capacitance of the diode depends on voltage and frequency. The capacitance decreases with increasing frequency due to a continuous distribution of the interface states. These results suggest that the Al/GO/n-Si/Al diode can be utilized as a photosensor. (C) 2012 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipUniversity of Tabuk [4/1433]; Korea Sanhak Foundation
dc.description.sponsorshipThe present study is a result of an international collaboration program between University of Tabuk, Tabuk, Saudi Arabia and Firat University, Elazig, Turkey. The authors gratefully acknowledge the financial support from the University of Tabuk, Project No. 4/1433. Also, this research was supported by 2012 Research Fund of the Korea Sanhak Foundation.
dc.identifier.doi10.1016/j.solener.2012.07.002
dc.identifier.endpage2966
dc.identifier.issn0038-092X
dc.identifier.issue10
dc.identifier.orcid0000-0002-1901-6243
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.orcid0000-0002-5148-627X
dc.identifier.scopus2-s2.0-84865766286
dc.identifier.scopusqualityQ1
dc.identifier.startpage2961
dc.identifier.urihttps://doi.org/10.1016/j.solener.2012.07.002
dc.identifier.urihttps://hdl.handle.net/11508/56352
dc.identifier.volume86
dc.identifier.wosWOS:000309306300006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofSolar Energy
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectGraphene oxide
dc.subjectSchottky diode
dc.subjectPhotoconductor
dc.subjectIdeality factor
dc.subjectBarrier height
dc.titlePhotodiodes based on graphene oxide-silicon junctions
dc.typeArticle

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