A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

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dc.contributor.authorAl-Ghamdi, A. A.
dc.contributor.authorAl-Hartomy, O. A.
dc.contributor.authorGupta, R.
dc.contributor.authorEl-Tantawy, F.
dc.contributor.authorTaskan, E.
dc.contributor.authorHasar, H.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:03:43Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractWe studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO2/Si junction. The interface states of the Al/p-Si/SiO2/DNA/Ag and Al/p-Si/SiO2/Ag junctions were analyzed by conductance technique. The obtained D-it values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
dc.description.sponsorshipUniversity of Tabuk [4/1433]
dc.description.sponsorshipThe present study is a result of an international collaboration program between University of Tabuk, Tabuk, Saudi Arabia and Firat University, Elazig, Turkey. The authors gratefully acknowledge the financial support from the University of Tabuk, project no. 4/1433.
dc.identifier.doi10.12693/APhysPolA.121.673
dc.identifier.endpage677
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue3
dc.identifier.orcid0000-0002-9620-8644
dc.identifier.orcid0000-0002-5148-627X
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.orcid0000-0001-8207-8669
dc.identifier.scopus2-s2.0-84859592850
dc.identifier.scopusqualityQ4
dc.identifier.startpage673
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.121.673
dc.identifier.urihttps://hdl.handle.net/11508/48435
dc.identifier.volume121
dc.identifier.wosWOS:000302930700019
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.ispartofActa Physica Polonica A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectCurrent-Voltage
dc.subjectElectrical Characterization
dc.subjectBarrier Height
dc.subjectSchottky Diode
dc.subjectElectronic-Properties
dc.subjectI-V
dc.subjectPassivation
dc.subjectLayer
dc.titleA DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
dc.typeArticle

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