Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes

dc.contributor.YOKIDTR246764
dc.contributor.YOKIDTR245640
dc.contributor.YOKIDTR59911
dc.contributor.YOKIDTR2990
dc.contributor.authorElgazzar, Elsayed
dc.contributor.authorDere, Ayşegül
dc.contributor.authorÖzen, Furkan
dc.contributor.authorKoran, Kenan
dc.contributor.authorAl-sehemi, Abdullah G.
dc.contributor.authorAl-ghamdi, Ahmed A.
dc.contributor.authorGörgülü, Ahmet Orhan
dc.contributor.authorEl-tantawy, F.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2017-04-11T12:54:27Z
dc.date.available2017-04-11T12:54:27Z
dc.date.issued2017-03-19
dc.descriptionMakale - Bilimsel Dergi Makalesi - Çok Yazarlı
dc.description.abstractThe present study introduces cyclotriphosphazene compounds substituted by dioxyphenylcoumarin as a photodiode application. Firstly, 7,8-dihydroxy-3-(3-methylphenyl)coumarin (1b) has been obtained by conventional as well as microwave assisted methods. Novel optoelectronic device characteristics for both mono and disubstituted dioxyphenylcoumarin bearing cyclotriphosphazene compounds (HCP-2 and HCP-4) have been synthesized from the reactions of cyclotriphosphazene containing dioxybiphenyl (HCP-1 and HCP-3) with compound 1b, respectively. The structures of compounds HCP 1–4 were identified by using elemental analysis, 1H, 13C-APT, 31P NMR and 2D HETCOR NMR and FT-IR spectroscopy methods. The Al/HCP-2/p-Si/Al and Al/HCP-4/-p-Si/Al photodiodes properties have been investigated from current-voltage (I?V) and capacitance-voltage (C?V) measurements. The electrical parameters of the prepared diodes such as ideality factor n and series resistance Rs were investigated in dark and at room temperature from (I?V) curve and Nord's method. As can be seen, the Al/HCP-2/p-Si/Al diode of high rectification ratio RR and with ideality factor greater than unity. The influence of light illuminations on the diode shows that the device can be used as photodiode with good efficiency. The barrier height ?b and series resistance Rs have been calculated from the capacitance-voltage (C?V)and conductance-voltage (G?V) measurements under various applied frequencies from 10 kHz to 1 MHz. the high difference in the results of barrier height obtained from I-V and C-V calculations confirm the influence of series resistance and localized states on transport of charge carriers and the photodiode performance.
dc.description.sponsorshipTUBITAK-110T652 Fırat University, FÜBAP-FF.1619
dc.identifier.citationElgazzar, E., Dere, A., Özen, F., Koran, K., Al-sehemi, A. ve diğerleri. (2017). Design and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes. Physica B, 515(1), 8-17.
dc.identifier.doi10.1016/j.physb.2017.03.025
dc.identifier.endpage17
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85016966351
dc.identifier.scopusqualityQ2
dc.identifier.startpage8
dc.identifier.urihttp://hdl.handle.net/11508/9771
dc.identifier.volume515
dc.identifier.wosWOS:000405264200002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofPhysica B
dc.relation.publicationcategoryUluslararası
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPhotodiode
dc.subjectSensor
dc.subjectCyclotriphosphazene
dc.subjectDioxycoumarin-phosphazene
dc.titleDesign and fabrication of dioxyphenylcoumarin substituted cyclotriphosphazene compounds photodiodes
dc.typeArticle

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