Electrical and Photoresponse Properties of Al/p-Si/Y1-xSrxMnO3/Al Heterojunction Photodiodes

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dc.contributor.authorOzmen, Denizhan
dc.contributor.authorYalcin, Mesut
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:34:48Z
dc.date.issued2020
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical and photoresponse properties of Al/p-Si/Y1-xSrxMnO3/Al diodes were investigated by using current-voltage and transient photocurrent measurements. The average ideality factor and barrier height has been calculated as 4.2568 and 0.613 eV respectively. The calculated ideality factor for Al/p-Si/Y1-xSrxMnO3/Al diodes is higher than unity because of the interface states, native oxide layer and series resistance. Also, diodes have exhibited property of photosensitivity. These indicated that the fabrication of diodes can be used optoelectronic device applications.
dc.identifier.doi10.1007/s12633-019-00177-7
dc.identifier.endpage891
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue4
dc.identifier.orcid0000-0002-6171-3018
dc.identifier.scopus2-s2.0-85066122611
dc.identifier.scopusqualityQ1
dc.identifier.startpage883
dc.identifier.urihttps://doi.org/10.1007/s12633-019-00177-7
dc.identifier.urihttps://hdl.handle.net/11508/57295
dc.identifier.volume12
dc.identifier.wosWOS:000519164200014
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectY1-xSrxMnO3
dc.subjectPhotodiode
dc.subjectIdeality factor
dc.subjectBarrier height
dc.subjectPhotoresponse
dc.titleElectrical and Photoresponse Properties of Al/p-Si/Y1-xSrxMnO3/Al Heterojunction Photodiodes
dc.typeArticle

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