Photoconducting and electrical properties of Al/TIPS-pentacene/p-Si/Al hybrid diode for optical sensor applications
| dc.contributor.author | Gupta, R. K. | |
| dc.contributor.author | Aydin, M. E. | |
| dc.contributor.author | Yakuphanoğlu, Fahrettin | |
| dc.date.accessioned | 2026-08-12T17:31:28Z | |
| dc.date.issued | 2011 | |
| dc.department | Fırat Üniversitesi | |
| dc.description.abstract | Schottky diode based on 6,13 bis (triisopropylsilylethynyle) (TIPS) pentacene was fabricated using spin coating. The junction properties and photoconductivity of the Al/TIPS-pentacene/p-Si/Aldiode were studied. The ideality factor and barrier height of the diode were calculated using I-V characteristics and obtained to be 1.97 and 0.65 eV, respectively. The photocurrent of the diode depends on the illumination intensity and increases with increasing photo-illumination intensity. The transient photocurrent results indicate that photocurrent under illumination is higher than the dark current and increases with increase in light intensity. The capacitance of the diode decreases with increasing frequency due to a continuous distribution of the interface states. The linear dependence of the double log plot of photocurrent and light intensity suggests that the Al/TIPS-pentacene/p-Si/Al diode could be used as an optical sensor. (C) 2011 Elsevier B.V. All rights reserved. | |
| dc.description.sponsorship | King Saud University | |
| dc.description.sponsorship | The Global Research Network for Electronic Device and Biosensors (GRNEDB) would like to thank King Saud University for supporting of this project. | |
| dc.identifier.doi | 10.1016/j.synthmet.2011.09.002 | |
| dc.identifier.endpage | 2360 | |
| dc.identifier.issn | 0379-6779 | |
| dc.identifier.issue | 21-22 | |
| dc.identifier.orcid | 0000-0001-5355-3897 | |
| dc.identifier.scopus | 2-s2.0-80055097995 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.startpage | 2355 | |
| dc.identifier.uri | https://doi.org/10.1016/j.synthmet.2011.09.002 | |
| dc.identifier.uri | https://hdl.handle.net/11508/56256 | |
| dc.identifier.volume | 161 | |
| dc.identifier.wos | WOS:000297878100028 | |
| dc.identifier.wosquality | Q2 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Elsevier Science Sa | |
| dc.relation.ispartof | Synthetic Metals | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WoS_20260511 | |
| dc.subject | TIPS-pentacene | |
| dc.subject | Photodiode | |
| dc.subject | Schottky diode | |
| dc.subject | Current-voltage | |
| dc.subject | Capacitance-voltage | |
| dc.title | Photoconducting and electrical properties of Al/TIPS-pentacene/p-Si/Al hybrid diode for optical sensor applications | |
| dc.type | Article |







