Electrical-optical properties of nanofiber ZnO film grown by sol gel method and fabrication of ZnO/p-Si heterojunction

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dc.contributor.authorMansour, Sh. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:46:26Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractElectrical and optical properties of the ZnO film prepared by sol-gel dip coating were investigated and ZnO film was deposited onto p-type silicon to obtain Ag/ZnO/p-Si heterojunction diode. Two dimensional atomic force microscopy images indicate that the ZnO film is formed from the fibers consisted from nanoparticles with grain size of 250-350 nm. The electrical conductivity mechanism of the ZnO film was varied from extrinsic to intrinsic conductivity. The calculated optical band gap of the ZnO film was found to be 3.22 eV. The Ag/ZnO/p-Si diode exhibit a non-linear behavior with ideality factor of n = 417 and barrier height of phi(B) = 0.79 eV. The electrical properties of the Ag/ZnO/p-Si diode were investigated by current voltage, capacitance-voltage-frequency and conductance-voltage-frequency measurements. (C) 2011 Elsevier Masson SAS. All rights reserved.
dc.description.sponsorshipManagement Unit of Scientific Research Projects of Firat University (FUBAP) [1947]; Global Research Network for Electronic Devices & Biosensors (GRNEDB); KING Saud University
dc.description.sponsorshipThis work was supported by the Management Unit of Scientific Research Projects of Firat University (FUBAP) (Project Number: 1947) and Global Research Network for Electronic Devices & Biosensors (GRNEDB) and KING Saud University.
dc.identifier.doi10.1016/j.solidstatesciences.2011.11.007
dc.identifier.endpage126
dc.identifier.issn1293-2558
dc.identifier.issue1
dc.identifier.orcid0000-0003-3368-5811
dc.identifier.scopus2-s2.0-83555172477
dc.identifier.scopusqualityQ2
dc.identifier.startpage121
dc.identifier.urihttps://doi.org/10.1016/j.solidstatesciences.2011.11.007
dc.identifier.urihttps://hdl.handle.net/11508/61075
dc.identifier.volume14
dc.identifier.wosWOS:000300204900019
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofSolid State Sciences
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectNanofiber ZnO
dc.subjectSchottky diode
dc.subjectSemiconductor
dc.titleElectrical-optical properties of nanofiber ZnO film grown by sol gel method and fabrication of ZnO/p-Si heterojunction
dc.typeArticle

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