Analysis of interface states of FeO-Al2O3 spinel composite film/p-Si diode by conductance technique

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dc.contributor.authorTataroglu, Adem
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorEl-Tantawy, Farid
dc.contributor.authorFarooq, W. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:48Z
dc.date.issued2016
dc.departmentFırat Üniversitesi
dc.description.abstractThe interface states and series resistance properties of the Al/FeO-Al2O3/p-Si diode were investigated by the capacitance (C) and conductance (G) measurements. The measured capacitance and conductance values were corrected to eliminate the effect of series resistance to obtain the real capacitance and conductance values of the diode. The C and G characteristics indicate the presence of interface states at the interface of the diode. The interface states density, N-ss, was determined using Hill-Coleman method, and it was found that the density of interface states is decreased with the frequency. The obtained results suggest that the series resistance and interface states affect significantly the electronic parameters of the Al/FeO-Al2O3/p-Si diode.
dc.description.sponsorshipKing Saud University
dc.description.sponsorshipThis study was supported by King Saud University. Authors thank to KSU.
dc.identifier.doi10.1007/s00339-016-9782-7
dc.identifier.issn0947-8396
dc.identifier.issn1432-0630
dc.identifier.issue3
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-84959283776
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s00339-016-9782-7
dc.identifier.urihttps://hdl.handle.net/11508/56761
dc.identifier.volume122
dc.identifier.wosWOS:000371041700079
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofApplied Physics A-Materials Science & Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectDependent Series Resistance
dc.subjectMis Schottky Diodes
dc.subjectSol-Gel Method
dc.subjectElectrical-Properties
dc.subjectDielectric-Properties
dc.subjectSurface-States
dc.subjectMagnetic-Properties
dc.subjectCurrent-Voltage
dc.subjectFrequency
dc.subjectNanoparticles
dc.titleAnalysis of interface states of FeO-Al2O3 spinel composite film/p-Si diode by conductance technique
dc.typeArticle

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