Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer

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dc.contributor.authorAydin, Mehmet Enver
dc.contributor.authorSoylu, Murat
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorFarooq, W. A.
dc.date.accessioned2026-08-12T17:30:39Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractThe electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol). (c) 2010 Elsevier B.V. All rights reserved.
dc.description.sponsorshipFeyzi AKKAYA Scientific Activates Supporting Fund (FABED); DUBAP in Dicle University [DUBAP-06-FF-83]; King Saud University (KSU) [KSU-VPP-102]
dc.description.sponsorshipThis work was supported by Feyzi AKKAYA Scientific Activates Supporting Fund (FABED), DUBAP in Dicle University with DUBAP-06-FF-83 number project and King Saud University (KSU) under grant: KSU-VPP-102. One of author wishes to thank KSU and FABED for young scientist grant.
dc.identifier.doi10.1016/j.mee.2010.11.012
dc.identifier.endpage871
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue6
dc.identifier.scopus2-s2.0-79952438701
dc.identifier.scopusqualityQ2
dc.identifier.startpage867
dc.identifier.urihttps://doi.org/10.1016/j.mee.2010.11.012
dc.identifier.urihttps://hdl.handle.net/11508/56182
dc.identifier.volume88
dc.identifier.wosWOS:000289186500004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectOrganic semiconductor/inorganic
dc.subjectsemiconductor contacts
dc.subjectHetero-junction
dc.subjectSchottky barrier diodes
dc.titleControlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer
dc.typeArticle

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