Molecular control over Ag/p-Si diode by organic layer
| dc.contributor.author | Aydin, M. E. | |
| dc.contributor.author | Yakuphanoğlu, Fahrettin | |
| dc.date.accessioned | 2026-08-12T17:29:43Z | |
| dc.date.issued | 2007 | |
| dc.department | Fırat Üniversitesi | |
| dc.description.abstract | Electrical transport properties of Ag metal-fluorescein sodium salt (FSS) organic layer-silicon junction have been investigated. The current-voltage (I-V) characteristics of the diode show rectifying behavior consistent with a potential barrier formed at the interface. The diode indicates a non-ideal I-V behavior with an ideality factor higher than unity. The ideality factor of the Ag/FSS/p-Si diode decreases with increasing temperature and the barrier height increases with increasing temperature. The barrier height (phi(b) = 0.98 eV) obtained from the capacitance-voltage (C-V) curve is higher than barrier height (phi(b) = 0.72 eV) derived from the I-V measurements. The barrier height of the Ag/FSS/p-Si Schottky diode at the room temperature is significantly larger than that of the Ag/p-Si Schottky diode. It is evaluated that the FSS organic layer controls electrical charge transport properties of Ag/p-Si diode by excluding effects of the SiO2 residual oxides on the hybrid diode. (C) 2007 Elsevier Ltd. All rights reserved. | |
| dc.identifier.doi | 10.1016/j.jpcs.2007.04.023 | |
| dc.identifier.endpage | 1773 | |
| dc.identifier.issn | 0022-3697 | |
| dc.identifier.issn | 1879-2553 | |
| dc.identifier.issue | 9 | |
| dc.identifier.scopus | 2-s2.0-34547945398 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.startpage | 1770 | |
| dc.identifier.uri | https://doi.org/10.1016/j.jpcs.2007.04.023 | |
| dc.identifier.uri | https://hdl.handle.net/11508/55815 | |
| dc.identifier.volume | 68 | |
| dc.identifier.wos | WOS:000249770000022 | |
| dc.identifier.wosquality | Q2 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Pergamon-Elsevier Science Ltd | |
| dc.relation.ispartof | Journal of Physics and Chemistry of Solids | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WoS_20260511 | |
| dc.subject | semiconductors | |
| dc.subject | organic compounds | |
| dc.subject | electrical properties | |
| dc.title | Molecular control over Ag/p-Si diode by organic layer | |
| dc.type | Article |
