A novel quaternary chalcogenide KBiCu2S3 based linear-dynamic-range optoelectronic device for optic communications systems

Abstract

A solar light optoelectronic device was fabricated using KBiCu2S3 and p-type silicon semiconductor. Electrical behavior of the optoelectronic device was characterized under solar light using current-electric field and phototransient current and capacitance-time measurements. Under solar light, the current at reverse bias region varies while the forward current did not change. The photoresponse ratio of photocurrent to dark current under 1000 W/m(2) was determined to be 79. This ratio suggests that the KBiCu2S3/p-type silicon device is a photo-device with its photovoltaic behavior. The junction interface behavior of the device was analyzed by capacitance-electric field (C-V) characteristics. The CeV behavior of the device was corrected by the series resistance. KBiCu2S3/p-type silicon optoelectronic device. The device is called as FYTRONIX optoelectronic device as it works both photodevice and photocapacitor modes. The FYTRONIX optoelectronic device can be used as a optoelectronic device in optic communication system applications.