Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: Comparison study

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dc.contributor.authorGunduz, B.
dc.contributor.authorYahia, I. S.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:31:37Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices have been investigated by current-voltage and capacitance-voltage characteristics. The diode parameters such as ideality factor, barrier height, rectification ratio, Richardson constant, and series resistance were determined from current-voltage characteristics at different temperatures. The diodes indicate a non-ideal current-voltage behavior due to the ideality factor being higher than unity due to the effect of series resistance and the presence of an interfacial layer. The interface state density D-it values of the P3HT and P3HT:MEH-PPV diodes vary from 1.829 x 10(10) to 3.825 x 10(11) eV(-1) cm(-2) and from 4.561 x 10(11) to 3.233 x 10(12) eV(-1) cm(-2), respectively. The photoconductivity properties of the diodes under various illuminations have been investigated. The photoconductivity parameters of the P3HT:MEH-PPV diode are higher than that of photoconductivity parameters of the P3HT diode. (C) 2012 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.mee.2012.06.003
dc.identifier.endpage57
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.orcid0000-0002-1447-7534
dc.identifier.scopus2-s2.0-84863441077
dc.identifier.scopusqualityQ2
dc.identifier.startpage41
dc.identifier.urihttps://doi.org/10.1016/j.mee.2012.06.003
dc.identifier.urihttps://hdl.handle.net/11508/56333
dc.identifier.volume98
dc.identifier.wosWOS:000309497200008
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectP3HT and MEH-PPV organic semiconductors
dc.subjectI-V and C-V measurements
dc.subjectInterface state density
dc.subjectOrganic Schottky diode
dc.subjectRectification ratio
dc.subjectPhotoconductivity properties
dc.titleElectrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: Comparison study
dc.typeReview Article

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