Electronic and photovoltaic properties Of P-Si/C70 heterojunction diode

dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:29:45Z
dc.date.issued2007
dc.departmentFırat Üniversitesi
dc.description.abstractElectronic and photovoltaic properties of p-Si/C-70 heterojunction diode have been investigated. The ideality factor n and barrier height Ob values of the diode were found to be 1.86 and 0.69 eV, respectively. The diode indicates a non-ideal current-voltage behaviour due to the ideality factor being higher than unity. This behaviour results from the effect of series resistance and the presence of an interfacial layer. The series resistance R-s and ideality factor n values were determined using Cheng's method and the obtained values are 2.21 X 10(5) ohm and 1.86, respectively. The device shows photovoltaic behaviour with a maximum open-circuit voltage of 0.22 V and a short-circuit current of 0.35 mu A under 6 mW/crn(2) light intensity. (C) 2007 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.physb.2007.07.010
dc.identifier.endpage211
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1.Şub
dc.identifier.scopus2-s2.0-35148850729
dc.identifier.scopusqualityQ2
dc.identifier.startpage208
dc.identifier.urihttps://doi.org/10.1016/j.physb.2007.07.010
dc.identifier.urihttps://hdl.handle.net/11508/55830
dc.identifier.volume400
dc.identifier.wosWOS:000250803000037
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectheterojunction diode
dc.subjectorganic semiconductor
dc.subjectFullerene-C-70
dc.titleElectronic and photovoltaic properties Of P-Si/C70 heterojunction diode
dc.typeArticle

Dosyalar