Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode

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dc.contributor.authorYahia, I. S.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorChusnutdinow, S.
dc.contributor.authorWojtowicz, T.
dc.contributor.authorKarczewski, G.
dc.date.accessioned2026-08-12T17:31:46Z
dc.date.issued2013
dc.departmentFırat Üniversitesi
dc.description.abstractA CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm(2). The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications. (C) 2012 Elsevier B.V. All rights reserved.
dc.description.sponsorshipEuropean Union within European Regional Development Fund, through grant Innovative Economy [POIG.01.01.02-00-108/09]
dc.description.sponsorshipResearch was partially supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-108/09).
dc.identifier.doi10.1016/j.cap.2012.09.018
dc.identifier.endpage543
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue3
dc.identifier.orcid0000-0003-4498-4622
dc.identifier.orcid0000-0001-6300-5974
dc.identifier.scopus2-s2.0-84871389539
dc.identifier.scopusqualityQ2
dc.identifier.startpage537
dc.identifier.urihttps://doi.org/10.1016/j.cap.2012.09.018
dc.identifier.urihttps://hdl.handle.net/11508/56385
dc.identifier.volume13
dc.identifier.wosWOS:000312846500018
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectCdTe/CdMnTe
dc.subjectPhotovoltaic effect
dc.subjectCurrent-voltage characterization under dark and illuminations
dc.subjectPhotovoltaic parameters
dc.titlePhotovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode
dc.typeArticle

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