Graphene doped TiO2/p-silicon heterojunction photodiode

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dc.contributor.authorHendi, A. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:48:42Z
dc.date.issued2016
dc.departmentFırat Üniversitesi
dc.description.abstractThe photoresponse properties of Al/p-Si/GO:TiO2/Au diodes were investigated using transient photocurrent and conductance spectroscopy techniques. The average barrier height and ideality factor values of the diodes were found to be 0.601 +/- 0.001 eV and 17.9.3 +/- 9. It is seen that the electronic parameters of the diodes depend on GO content. The obtained ideality factor is higher than unity due to the low carrier mobility of the organic interlayer. The change in the capacitance of the diodes indicates a continuous distribution of interface states. The photoresponse properties of the diodes are changed with GO content. Al/p-Si/GO:TiO2/Au having 3% GO weight exhibited the highest photosensitivity. The obtained results indicates that the prepared photodiodes can be used as a photosensor in optoelectronic device applications. (C) 2016 Elsevier B.V. All rights reserved.
dc.description.sponsorshipDeanship of Scientific Research (DSR), King Abdulaziz University, Jeddah [363-97-D1436]; DSR
dc.description.sponsorshipThis work was supported by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under grant No. (363-97-D1436). The authors, therefore, gratefully acknowledge the DSR technical and financial support.
dc.identifier.doi10.1016/j.jallcom.2016.01.045
dc.identifier.endpage427
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.orcid0000-0002-8729-1925
dc.identifier.scopus2-s2.0-84955444637
dc.identifier.scopusqualityQ1
dc.identifier.startpage418
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2016.01.045
dc.identifier.urihttps://hdl.handle.net/11508/61529
dc.identifier.volume665
dc.identifier.wosWOS:000369375800058
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectGraphene oxide
dc.subjectTitanium dioxide
dc.subjectPhotodiode
dc.titleGraphene doped TiO2/p-silicon heterojunction photodiode
dc.typeArticle

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