Analysis of interface states of GaAs-rhodamine hybrid diode by Hill-Coleman method

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dc.contributor.authorCavas, Mehmet
dc.date.accessioned2026-08-12T17:31:49Z
dc.date.issued2013
dc.departmentFırat Üniversitesi
dc.description.abstractThe interface states properties of a hybrid diode based on GaAs and Rhodamine organic semiconductor were investigated by current-voltage and capacitance-conductance-voltage measurements. The Al/Rhodamine/p-GaAs diode exhibits a rectification behavior with the barrier height value of 0.794 eV and ideality factor of 1.45. The interface states density of the diode was determined by Hill-Coleman method. The D-it value is decreased with increasing frequency. It is seen that the electronic parameters of the Al/Rhodamine/p-GaAs diode are significantly different from the conventional Al/p-GaAs Schottky diode. This indicates that Rhodamine organic semiconductor controls the interface properties of Al/p-GaAs Schottky diode. (C) 2013 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.jpcs.2013.02.012
dc.identifier.endpage895
dc.identifier.issn0022-3697
dc.identifier.issue6
dc.identifier.orcid0000-0002-0130-1644
dc.identifier.scopus2-s2.0-84875213370
dc.identifier.scopusqualityQ1
dc.identifier.startpage892
dc.identifier.urihttps://doi.org/10.1016/j.jpcs.2013.02.012
dc.identifier.urihttps://hdl.handle.net/11508/56403
dc.identifier.volume74
dc.identifier.wosWOS:000317326400016
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofJournal of Physics and Chemistry of Solids
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectElectronic materials
dc.subjectSchottky diode
dc.subjectElectrical properties
dc.titleAnalysis of interface states of GaAs-rhodamine hybrid diode by Hill-Coleman method
dc.typeArticle

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