Optical, Electrical and Photoresponse Properties of Si-based Diodes with NiO-doped TiO2 Film Prepared by Sol-gel Method

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dc.contributor.authorTataroglu, A.
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorIlhan, M.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:33:16Z
dc.date.issued2018
dc.departmentFırat Üniversitesi
dc.description.abstractThe Ti1-xO2NixO films (x = 0.0, 0.05, 0.10 and 0.15) with various NiO contents were prepared by sol-gel technique. The prepared films were coated on n-Si substrate by spin coating technique. The optical and photoresponse properties of the fabricated Al/n-Si/Ti1-xO2NixO/Al diodes were investigated. The optical properties of the films were studied by transmittance and absorbance spectra. The photoconducting behavior of the diodes was investigated under various solar light intensities. The photocurrent of the diodes under illumination was higher than the dark current. This result confirms that the diodes exhibit both photoconducting and photodiode behavior. The photoresponsivity of the diodes are changed with NiO content.
dc.description.sponsorshipKing Khalid University through the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia [RCAMS/KKU/002-16]
dc.description.sponsorshipAuthors would like to acknowledge the support of the King Khalid University for this research through a grant RCAMS/KKU/002-16 under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia.
dc.identifier.doi10.1007/s12633-016-9548-z
dc.identifier.endpage920
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue3
dc.identifier.orcid0000-0002-6793-3038
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-85019751210
dc.identifier.scopusqualityQ1
dc.identifier.startpage913
dc.identifier.urihttps://doi.org/10.1007/s12633-016-9548-z
dc.identifier.urihttps://hdl.handle.net/11508/56953
dc.identifier.volume10
dc.identifier.wosWOS:000431799600027
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectNiO doped TiO2 films
dc.subjectDiode
dc.subjectOptical and photoresponse properties
dc.subjectPhotoconducting
dc.titleOptical, Electrical and Photoresponse Properties of Si-based Diodes with NiO-doped TiO2 Film Prepared by Sol-gel Method
dc.typeArticle

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