Electrical characterization of inorganic-on-organic diode based InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS)

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dc.contributor.authorAydin, M. Enver
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:14:51Z
dc.date.issued2012
dc.departmentFırat Üniversitesi
dc.description.abstractThe electronic properties of metal-organic semiconductor-inorganic semiconductor diode between InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS) polymeric organic semiconductor film have been investigated via current-voltage and capacitance-voltage methods. The Al/PEDOT:PSS/p-InP contact exhibits a rectification behavior with the barrier height value of 0.98 eV and with the ideality factor value of 2.6 obtained from their forward bias current voltage (I-V) characteristics at the room temperature greater than the conventional Al/p-InP (0.83 eV, n = 1.13). This increase in barrier height and ideality factor can be attributed to PEDOT:PSS film formed at Al/p-InP interface. (C) 2012 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipKing Saud University [KSU-VPP-102]; Feyzi AKKAYA Scientific Activates Supporting Fund (FABED); DUBAP in Dicle University
dc.description.sponsorshipThis work was supported by King Saud University under a Grant number: KSU-VPP-102 and Feyzi AKKAYA Scientific Activates Supporting Fund (FABED) and DUBAP in Dicle University. Authors wish to thank KSU, FABED and DUBAP.
dc.identifier.doi10.1016/j.microrel.2012.03.005
dc.identifier.endpage1354
dc.identifier.issn0026-2714
dc.identifier.issue7
dc.identifier.scopus2-s2.0-84861815672
dc.identifier.scopusqualityQ2
dc.identifier.startpage1350
dc.identifier.urihttps://doi.org/10.1016/j.microrel.2012.03.005
dc.identifier.urihttps://hdl.handle.net/11508/51987
dc.identifier.volume52
dc.identifier.wosWOS:000305768500016
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofMicroelectronics Reliability
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectCapacitance-Voltage Characteristics
dc.subjectInterface State Density
dc.subjectBarrier Height
dc.subjectSemiconductor Contact
dc.subjectTemperature-Dependence
dc.subjectCurrent-Transport
dc.subjectSchottky Diodes
dc.subjectP-Type
dc.subjectSi
dc.subjectJunction
dc.titleElectrical characterization of inorganic-on-organic diode based InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS)
dc.typeArticle

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