Analysis of interface states and series resistance of Ag/SiO2/n-Si MIS Schottky diode using current-voltage and impedance spectroscopy methods

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dc.contributor.authorOkutan, Mustafa
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:29:53Z
dc.date.issued2008
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical characteristics and interface state density properties of Ag/SiO2/n-Si metal-insulator-semiconductor diode have been analyzed by current-voltage and impedance spectroscopy techniques. The electronic parameters such as barrier height, ideality factor and average series resistance were determined and were found to be 0.62 eV, 1.91 and 975.8 Omega, respectively. The calculated ideality factor shows that Ag/SiO2/n-Si structure obeys a metal-interfacial layer-semiconductor configuration rather than ideal Schottky barrier diode. The interface state density of the diode is of order of similar to 10(11) eV(-1) cm(-2). The dielectrical relaxation mechanism of the diode is analyzed by Cole-Cole plots, indicating the presence of single relaxation mechanism. It is evaluated that the interfacial oxide layer modifies electrical parameters such as interface state density, series resistance and barrier height of Ag/SiO2/n-Si diode. (c) 2007 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.mee.2007.11.011
dc.identifier.endpage653
dc.identifier.issn0167-9317
dc.identifier.issn1873-5568
dc.identifier.issue3
dc.identifier.orcid0000-0002-5707-8090
dc.identifier.scopus2-s2.0-39149109158
dc.identifier.scopusqualityQ2
dc.identifier.startpage646
dc.identifier.urihttps://doi.org/10.1016/j.mee.2007.11.011
dc.identifier.urihttps://hdl.handle.net/11508/55871
dc.identifier.volume85
dc.identifier.wosWOS:000253806900024
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectmetal-insulator-semiconductor diode
dc.subjectinterfacial state density
dc.subjectAC conductance
dc.titleAnalysis of interface states and series resistance of Ag/SiO2/n-Si MIS Schottky diode using current-voltage and impedance spectroscopy methods
dc.typeArticle

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