The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics

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dc.contributor.authorKavasoglu, A. Sertap
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorKavasoglu, Nese
dc.contributor.authorPakma, Osman
dc.contributor.authorBirgi, Ozcan
dc.contributor.authorOktik, Sener
dc.date.accessioned2026-08-12T17:45:56Z
dc.date.issued2010
dc.departmentFırat Üniversitesi
dc.description.abstractIn this study, temperature dependent current-voltage (I-V) measurements and investigation of the dc current transport mechanism of n-Si/MEH-PPV device have been performed. While the series resistance value displayed strongly temperature dependent behaviour, the ideality factor varied between 3.2 and 1.8 in the temperature range 110-330 K. The temperature dependent ideality factor behaviour at low temperature region (110-220K) shows that tunnelling enhanced recombination is valid rather than thermionic emission theory and the characteristic tunnelling energy is calculated as 30 meV. There is a slightly linear relationship between the ideality factor and temperature at region II (230-330 K) which is attributed to drift-diffusion current transport in the n-Si/MEH-PPV device as stated already by Osvald. (C) 2009 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.jallcom.2009.11.128
dc.identifier.endpage426
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.issue1.Şub
dc.identifier.orcid0000-0002-3098-0973
dc.identifier.scopus2-s2.0-76549132881
dc.identifier.scopusqualityQ1
dc.identifier.startpage421
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2009.11.128
dc.identifier.urihttps://hdl.handle.net/11508/60879
dc.identifier.volume492
dc.identifier.wosWOS:000276018900098
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectSchottky diodes
dc.subjectI-V characteristics
dc.subjectIdeality factor
dc.subjectSeries resistance
dc.subjectBarrier height
dc.subjectMEH-PPV
dc.subjectHeterojunction diode
dc.titleThe analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I-V-T characteristics
dc.typeArticle

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