Extraction of electronic parameters of organic diode fabricated with NIR absorbing functional manganase phthalocyanine organic semiconductor

Abstract

The semiconducting and metal/organic semiconductor properties of the newly synthesized NIR absorbing alpha-substituted manganase phthalocyanine bearing functional 2,3-dihydroxypropylthio moieties {M[Pc(S-CH(3)CH(2)(OH)CH(2)(OH))](4)X}(M = Mn(III)) have been investigated by electrical conductivity-temperature, optical absorption and current-voltage characteristics methods. The electrical conductivity increases with the temperature, suggesting that the peripheral alpha-substituted-functional manganase phthalocyanine is an organic semiconductor. The optical band gap and trap energy values were determined and were found to be 2.98 eV and 1.95 eV, respectively. The ITO/MnPc/Al diode shows a rectifying behavior due to the formation of MnPc/Al interface with a rectification ratio of 29.4 at +/- 2 V. The series resistance R(s) and ideality factor n values were found to be 102.6 k Omega and 8.89, respectively. The interface state density for the diode was of order of 2.73 x 10(11) eV(-1) cm(-2) with the interface time constant of 1.93 x 10(-5). It is evaluated that newly synthesized alpha-substituted manganase phthalocyanine bearing functional 2,3-dihydroxypropylthio moieties is an organic semiconductor and can be used in electronic device applications as an organic diode. (C) 2011 Elsevier B.V. All rights reserved.