Fabrication and characterization of p-n junctions based on ZnO and CuPc

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dc.contributor.authorGupta, R. K.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorGhosh, K.
dc.contributor.authorKahol, P. K.
dc.date.accessioned2026-08-12T17:30:47Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractp-n Junctions based on zinc oxide (ZnO) and copper-phthalocyanine (CuPc) were fabricated using pulsed laser deposition and thermal evaporator techniques, respectively. Current-voltage (I-V) characteristics of the ZnO-CuPc junction showed rectifying behavior. Various junction parameters such as barrier height and ideality factor were calculated using I-V data and observed to be 0.63 +/- 0.02 eV and 4.0 +/- 0.3, respectively. Cheung and Norde's method were used to compare the junction parameters obtained by I-V characteristics. (C) 2011 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.mee.2011.05.023
dc.identifier.endpage3069
dc.identifier.issn0167-9317
dc.identifier.issue10
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.scopus2-s2.0-80052792734
dc.identifier.scopusqualityQ2
dc.identifier.startpage3067
dc.identifier.urihttps://doi.org/10.1016/j.mee.2011.05.023
dc.identifier.urihttps://hdl.handle.net/11508/56245
dc.identifier.volume88
dc.identifier.wosWOS:000297400900004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofMicroelectronic Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectp-n Junction
dc.subjectZnO
dc.subjectCuPc
dc.subjectPulsed laser
dc.subjectThermal evaporator
dc.subjectThin films
dc.subjectSemiconductor
dc.titleFabrication and characterization of p-n junctions based on ZnO and CuPc
dc.typeArticle

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