Impedance Spectroscopy of Nanostructure p-ZnGa2Se4/n-Si Heterojunction Diode

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dc.contributor.authorYahia, I. S.
dc.contributor.authorFadel, M.
dc.contributor.authorSakr, G. B.
dc.contributor.authorShenouda, S. S.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorFarooq, W. A.
dc.date.accessioned2026-08-12T17:03:38Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractThe impedance characteristics of the nanostructure p-ZnGa2Se4/n-Si heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz - 5 MHz). The real and imaginary parts of the complex impedance are changed with the frequency. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The Cole-Cole plots under various temperatures exhibit one relaxation mechanism. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
dc.description.sponsorshipKing Saud University [KSU-VPP-102]
dc.description.sponsorshipThis work was partially supported by King Saud University under grant: KSU-VPP-102. One of the authors wishes to thank KSU.
dc.identifier.doi10.12693/APhysPolA.120.563
dc.identifier.endpage566
dc.identifier.issn0587-4246
dc.identifier.issue3
dc.identifier.orcid0000-0002-2907-1502
dc.identifier.orcid0000-0002-4721-268X
dc.identifier.orcid0000-0002-3156-471X
dc.identifier.scopus2-s2.0-80052202707
dc.identifier.scopusqualityQ4
dc.identifier.startpage563
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.120.563
dc.identifier.urihttps://hdl.handle.net/11508/48398
dc.identifier.volume120
dc.identifier.wosWOS:000294580900036
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.ispartofActa Physica Polonica A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectNonlinear-Optical Properties
dc.subjectElectrical-Properties
dc.subjectDefect-Chalcopyrite
dc.subjectThin-Films
dc.titleImpedance Spectroscopy of Nanostructure p-ZnGa2Se4/n-Si Heterojunction Diode
dc.typeArticle

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