Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method
| dc.contributor.author | Akyuzlu, A. Merih | |
| dc.contributor.author | Dagdelen, Fethi | |
| dc.contributor.author | Gultek, Ahmet | |
| dc.contributor.author | Hendi, A. A. | |
| dc.contributor.author | Yakuphanoğlu, Fahrettin | |
| dc.date.accessioned | 2026-08-12T17:33:14Z | |
| dc.date.issued | 2017 | |
| dc.department | Fırat Üniversitesi | |
| dc.description.abstract | ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications. | |
| dc.description.sponsorship | Management Unit of Scientific Research projects of Firat University (FUBAP) [FF.13.08] | |
| dc.description.sponsorship | This work was supported by the Management Unit of Scientific Research projects of Firat University (FUBAP) (Project Number: FF.13.08). | |
| dc.identifier.doi | 10.1140/epjp/i2017-11442-8 | |
| dc.identifier.issn | 2190-5444 | |
| dc.identifier.issue | 4 | |
| dc.identifier.orcid | 0000-0001-9849-590X | |
| dc.identifier.orcid | 0000-0002-8729-1925 | |
| dc.identifier.scopus | 2-s2.0-85018474704 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.uri | https://doi.org/10.1140/epjp/i2017-11442-8 | |
| dc.identifier.uri | https://hdl.handle.net/11508/56941 | |
| dc.identifier.volume | 132 | |
| dc.identifier.wos | WOS:000400067300001 | |
| dc.identifier.wosquality | Q2 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Springer Heidelberg | |
| dc.relation.ispartof | European Physical Journal Plus | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WoS_20260511 | |
| dc.subject | Thin-Films | |
| dc.subject | Fabrication | |
| dc.subject | Nio | |
| dc.title | Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method | |
| dc.type | Article |
