Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorShah, M.
dc.contributor.authorFarooq, W. Aslam
dc.date.accessioned2026-08-12T17:03:38Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current voltage, capacitance voltage and conductance voltage methods. The values of ideality factor and barrier height of the diode were determined from the current voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7.64 x 10(10) cm(-2) eV(-1). The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer.
dc.description.sponsorshipFeyzi AKKAYA Scientific Activates Supporting Fund (FABED); King Saud University [KSU-VPP-102]
dc.description.sponsorshipThis work was supported by Feyzi AKKAYA Scientific Activates Supporting Fund (FABED) and King Saud University under a grant number: KSU-VPP-102 and Author wishes to thank KSU and FABED for young scientist grant.
dc.identifier.doi10.12693/APhysPolA.120.558
dc.identifier.endpage562
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue3
dc.identifier.scopus2-s2.0-80052203053
dc.identifier.scopusqualityQ4
dc.identifier.startpage558
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.120.558
dc.identifier.urihttps://hdl.handle.net/11508/48399
dc.identifier.volume120
dc.identifier.wosWOS:000294580900035
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.ispartofActa Physica Polonica A
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectSchottky Diode
dc.subjectCurrent-Voltage
dc.subjectI-V
dc.subjectPolymer
dc.subjectParameters
dc.subjectConductance
dc.subjectExtraction
dc.subjectSilicon
dc.titleElectrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier
dc.typeArticle

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