Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorKandaz, M.
dc.contributor.authorSenkal, B. F.
dc.date.accessioned2026-08-12T17:13:54Z
dc.date.issued2008
dc.departmentFırat Üniversitesi
dc.description.abstractElectrical characteristics of the Al/p-type silicon/2,9,16,23-tetrakis-{6-(-thiophene-2-carboxylate)-hexylthio} phthalocyaninato cobalt(II) organic semiconductor contact have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor (1.33), barrier height (0.90 eV) and series resistance (314.5 k Omega) of the Al/p-Si/CoPc contact were obtained from current-voltage characteristics. The barrier height obtained for the Al/p-Si/CoPc diode is significantly higher than that of obtained for the conventional Al/p-Si Schottky diode. The CoPc organic layer modifies the effective barrier height of Al/p-Si Schottky diode as the organic film forms a physical barrier between Al metal and the p-Si. The interface-state density of the diode was determined and interface-state density was found to vary from 1.23x 10(14) eV(-1) cm(-2) to 0.69 x 10(14) eV(-1) cm(-2). It is evaluated that the CoPc organic layer modifies electrical parameters and interface properties of Al/p-Si junction. (c) 2008 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTurkish Scientific and Technological Research Council of TURKEY (TUBITAK) [105T137]
dc.description.sponsorshipThis work was supported by the Turkish Scientific and Technological Research Council of TURKEY (TUBITAK) (Project No. 105T137) and T.R. Authors are thankful to The Scientific and Technological Research Council of Turkey.
dc.identifier.doi10.1016/j.tsf.2008.06.076
dc.identifier.endpage8796
dc.identifier.issn0040-6090
dc.identifier.issue23
dc.identifier.orcid0000-0001-7904-5735
dc.identifier.scopus2-s2.0-50849144325
dc.identifier.scopusqualityQ2
dc.identifier.startpage8793
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2008.06.076
dc.identifier.urihttps://hdl.handle.net/11508/51610
dc.identifier.volume516
dc.identifier.wosWOS:000260579800101
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofThin Solid Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectPhthalocyanine
dc.subjectOrganic semiconductor
dc.subjectMetal-organic-inorganic
dc.subjectsemiconductor contacts
dc.subjectInterface-state density
dc.titleCurrent-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact
dc.typeArticle

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