p-Si/DNA photoconductive diode for optical sensor applications

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dc.contributor.authorGupta, R. K.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorHasar, H.
dc.contributor.authorAl-Khedhairy, Abdulaziz A.
dc.date.accessioned2026-08-12T17:30:47Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractThe junction parameters of Al/p-Si/Ag and Al/p-Si/DNA/Ag diodes were studied using current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/p-Si/DNA/Ag diode is better than that of Al/p-Si/Ag diode. The ideality factor and barrier height values of the Al/p-Si/DNA/Ag diode were obtained to be 1.2 +/- 0.1 and 0.56 +/- 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p-Si/DNA junction could be used as an optical sensor. (C) 2011 Elsevier B.V. All rights reserved.
dc.description.sponsorshipGlobal Research Network for Electronic Devices & Biosensors (GRNEDB); KING Saud University
dc.description.sponsorshipThis work was supported by Global Research Network for Electronic Devices & Biosensors (GRNEDB) and KING Saud University.
dc.identifier.doi10.1016/j.synthmet.2011.07.016
dc.identifier.endpage2016
dc.identifier.issn0379-6779
dc.identifier.issue17-18
dc.identifier.orcid0000-0001-8207-8669
dc.identifier.orcid0000-0002-1210-6262
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.scopus2-s2.0-80052262561
dc.identifier.scopusqualityQ1
dc.identifier.startpage2011
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2011.07.016
dc.identifier.urihttps://hdl.handle.net/11508/56241
dc.identifier.volume161
dc.identifier.wosWOS:000295564000036
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectDNA
dc.subjectOrganic material
dc.subjectPhotoresponse
dc.subjectSchottky diode
dc.subjectIdeality factor
dc.titlep-Si/DNA photoconductive diode for optical sensor applications
dc.typeArticle

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