ZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorCaglar, Yasemin
dc.contributor.authorCaglar, Mujdat
dc.contributor.authorIlican, Saliha
dc.date.accessioned2026-08-12T17:30:39Z
dc.date.issued2010
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical and photovoltaic properties of the nanostructure ZnO/p-Si diode have been investigated. The nanostructure ZnO/p-Si diode was fabricated using sot-gel spin coating method. The ideality factor and barrier height of the diode were found to be 3.18 and 0.78 eV, respectively. The obtained n ideality factor is higher than 2, indicating that the diode exhibits a non-ideal behavior due to the oxide layer and the presence of surface states. The nanostructure of the ZnO improves the quality of ZnO/p-Si interface. The diode shows a photovoltaic behavior with a maximum open circuit voltage V(oc) of 0.26 V and short-circuits current I(sc) of 1.87 x 10(-8) A under 100 mW/cm(2). It is evaluated that the nanostructure ZnO/p-Si diode is a photodiode with the obtained electronic parameters. (C) 2010 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipAnadolu University [061039]; National Boron Research Institute (BOREN) [BOREN-2006-26-C25-19]
dc.description.sponsorshipThis work was supported by Anadolu University Commission of Scientific Research Projects under Grant no. 061039 and was partially supported by the National Boron Research Institute (BOREN) (Project Number: BOREN-2006-26-C25-19). One of authors wishes to thank BOREN.
dc.identifier.doi10.1016/j.mssp.2010.05.005
dc.identifier.endpage140
dc.identifier.issn1369-8001
dc.identifier.issue3
dc.identifier.orcid0000-0001-8462-0925
dc.identifier.orcid0000-0001-9724-7664
dc.identifier.scopus2-s2.0-79952452427
dc.identifier.scopusqualityQ1
dc.identifier.startpage137
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2010.05.005
dc.identifier.urihttps://hdl.handle.net/11508/56183
dc.identifier.volume13
dc.identifier.wosWOS:000291070500003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectZnO
dc.subjectSol-gel spin coating
dc.subjectNanostructure
dc.subjectPhotodiode
dc.titleZnO/p-Si heterojunction photodiode by sol-gel deposition of nanostructure n-ZnO film on p-Si substrate
dc.typeArticle

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