Stokes shift and band gap bowing in InxGa1-xN (0.060?x?0.105) grown by metalorganic vapour phase epitaxy

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dc.contributor.authorYildiz, A.
dc.contributor.authorDagdelen, F.
dc.contributor.authorAcar, S.
dc.contributor.authorLisesivdin, S. B.
dc.contributor.authorKasap, M.
dc.contributor.authorAydogdu, Y.
dc.contributor.authorBosi, M.
dc.date.accessioned2026-08-12T17:03:22Z
dc.date.issued2008
dc.departmentFırat Üniversitesi
dc.descriptionConference on New Materials for Magnetoelectronics - MAG-EL-MAT -- MAY 07-10, 2007 -- Bedlewo, POLAND
dc.description.abstractWe presented the results of electrical and optical studies of the properties of InxGa1-xN epitaxial layers (0.060 <= x <= 0.105) grown by metalorganic vapour phase epitaxy. Resistivity and Hall effect measurements of the samples were carried out at room temperature. Optical properties of the samples were characterized by photoluminescence and optical absorption spectroscopy. The comparison between the photoluminescence and the optical absorption measurements gives the Stokes shift. We explained the observed Stokes shift in terms of Burstein-Moss effect. The band gap versus composition plot for InxGa1-xN alloys is well fitted with a bowing parameter of approximate to 3.6 eV.
dc.identifier.doi10.12693/APhysPolA.113.731
dc.identifier.endpage739
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue2
dc.identifier.orcid0000-0001-9849-590X
dc.identifier.orcid0000-0001-9635-6770
dc.identifier.orcid0000-0003-4137-6971
dc.identifier.orcid0000-0003-4014-7800
dc.identifier.orcid0000-0001-8992-0249
dc.identifier.orcid0000-0002-1115-0691
dc.identifier.scopus2-s2.0-39549104271
dc.identifier.scopusqualityQ4
dc.identifier.startpage731
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.113.731
dc.identifier.urihttps://hdl.handle.net/11508/48260
dc.identifier.volume113
dc.identifier.wosWOS:000253325000012
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.ispartofActa Physica Polonica A
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectOptical-Properties
dc.subjectIngan Epilayers
dc.subjectAlloys
dc.subjectFilms
dc.subjectDeposition
dc.subjectLayers
dc.subjectThick
dc.titleStokes shift and band gap bowing in InxGa1-xN (0.060?x?0.105) grown by metalorganic vapour phase epitaxy
dc.typeConference Object

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