Studies of photosensitivity and photo-induced negative differential resistance (NDR) of TIPS-pentacene-poly(3-hexyl)thiophene blend organic thin film transistor

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dc.contributor.authorMansouri, S.
dc.contributor.authorJouili, A.
dc.contributor.authorEl Mir, L.
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:32Z
dc.date.issued2015
dc.departmentFırat Üniversitesi
dc.description.abstractWe have simulated the experimental characteristics of the organic thin film transistor to reproduce the transfer and output characteristics in saturation regime. The photoresponse and gate field dependence of the charge transport characteristics of the TFTs were studied. The threshold voltage exhibited a positive shift from 0.34V in darkness to 5.18 V under illumination, which can be attributed to the well-known photovoltaic effect resulting from the transport of photogenerated holes and trappings of photogenerated electrons near the source electrode in organic phototransistors. When white light irradiated the organic TFTs, a negative differential resistance (NDR) behavior appears in the saturation region of output characteristics. This NDR behavior in TFTs can be explained in terms of trappings and releasing mechanism of the mobile charges in the interface between the electrodes (source and drain) and the organic layer. (C) 2015 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTunisian Ministry of High Education
dc.description.sponsorshipThe authors gratefully acknowledge and thank the Deanship of Scientific Research, King Abdulaziz University (KAU), Jeddah, Saudi Arabia, for the research group Advances in composites, Synthesis and applications. This work is as a result of international collaboration of the group with Prof. F. Yakuphanoglu. Also, this work was supported by Tunisian Ministry of High Education.
dc.identifier.doi10.1016/j.synthmet.2015.05.016
dc.identifier.endpage12
dc.identifier.issn0379-6779
dc.identifier.orcid0000-0001-5394-3174
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-84930946501
dc.identifier.scopusqualityQ1
dc.identifier.startpage1
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2015.05.016
dc.identifier.urihttps://hdl.handle.net/11508/56663
dc.identifier.volume207
dc.identifier.wosWOS:000359502900001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectTIPS:P3HT-TFF
dc.subjectPhotoresponse
dc.subjectElectrical properties
dc.subjectNDR effect
dc.titleStudies of photosensitivity and photo-induced negative differential resistance (NDR) of TIPS-pentacene-poly(3-hexyl)thiophene blend organic thin film transistor
dc.typeArticle

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