Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications

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dc.contributor.authorAslan, Naim
dc.contributor.authorKoc, Mumin Mehmet
dc.contributor.authorDere, Aysegul
dc.contributor.authorArif, Bilal
dc.contributor.authorErkovan, Mustafa
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:33:26Z
dc.date.issued2018
dc.departmentFırat Üniversitesi
dc.description.abstractElectrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the Al/a:C/p-Si/Al doped Ti diode for optoelectronic applications were investigated. The reverse current of the diode increased with the increasing illumination intensities when the bias voltage was applied. By using the forward bias I-V characteristics, the ideality factor (n) and barrier height (Of)) of Al/Ti-a:C/p-Si photodiode structure was found as 1,84 and 0,50 eV, respectively. In addition, the capacitance voltage (C-V) and conductance voltage (G-V) measurements of the diode were studied in the frequency range of 100 kHz-600 kHz. The measured values of the capacitance decreased with the increasing frequency. The photoelectrical properties of Al/Ti-a:C/p-Si/Al device indicates that the photodiode investigated in this paper has great potential to be used in optoelectronic device applications and in industry. (C) 2017 Elsevier B.V. All rights reserved.
dc.description.sponsorshipKing Khalid University under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia [RCAMS/KKU/002-16]
dc.description.sponsorshipAuthors would like to acknowledge the support of the King Khalid University for this research through a grant RCAMS/KKU/002-16 under the (Research Center for Advanced Materials Science) at King Khalid University, Kingdom of Saudi Arabia.
dc.identifier.doi10.1016/j.molstruc.2017.11.050
dc.identifier.endpage818
dc.identifier.issn0022-2860
dc.identifier.issn1872-8014
dc.identifier.orcid0000-0002-4527-2056
dc.identifier.orcid0000-0002-6793-3038
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.orcid0000-0002-1159-1673
dc.identifier.orcid0000-0003-4500-0373
dc.identifier.orcid0000-0001-7032-2679
dc.identifier.scopus2-s2.0-85034863355
dc.identifier.scopusqualityQ1
dc.identifier.startpage813
dc.identifier.urihttps://doi.org/10.1016/j.molstruc.2017.11.050
dc.identifier.urihttps://hdl.handle.net/11508/57022
dc.identifier.volume1155
dc.identifier.wosWOS:000424717800086
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofJournal of Molecular Structure
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectTi doped a:C
dc.subjectCurrent-voltage characteristics
dc.subjectElectrodeposition technique
dc.titleTi doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
dc.typeArticle

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