Electrical Characterization of the Boron Trifluoride Doped Poly(3-aminoacetophenone)/p-Si Junction

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorSenkal, B. Filiz
dc.date.accessioned2026-08-12T17:30:26Z
dc.date.issued2010
dc.departmentFırat Üniversitesi
dc.description.abstractElectrical and interface state properties of the borontrifluoride doped poly(3-aminoacetophenone)/p-Si junction have been investigated by current-voltage and impedance spectroscopy methods. Al/p-Si/P(3)APBF(3)/Aldiode indicates a nonideal behavior with electrical parameters (n = 3.53, phi(B) = 0.82 eV, and R-s = 1.4.8 k Omega), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p-Si/P(3)APBF(3)/Aldiode is higher than that of the conventional Al/p-Si (phi(B) = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05 x 10(12) eV(-1) cm(-2). It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3-aminoacetophenone) organic semiconductor. POLYM. ENG. SCI., 50:929-935, 2010. (C) 2009 Society of Plastics Engineers
dc.description.sponsorshipNational Boron Research Institute [BOREN-2006-26-C25-19]
dc.description.sponsorshipThis work was supported by the National Boron Research Institute (BOREN) (Project No. BOREN-2006-26-C25-19). The authors thank BOREN.
dc.identifier.doi10.1002/pen.21614
dc.identifier.endpage935
dc.identifier.issn0032-3888
dc.identifier.issue5
dc.identifier.scopus2-s2.0-77951817955
dc.identifier.scopusqualityQ1
dc.identifier.startpage929
dc.identifier.urihttps://doi.org/10.1002/pen.21614
dc.identifier.urihttps://hdl.handle.net/11508/56100
dc.identifier.volume50
dc.identifier.wosWOS:000276928400010
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley-Blackwell
dc.relation.ispartofPolymer Engineering and Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260511
dc.subjectCurrent-Voltage Characteristics
dc.subjectNonpolymeric Organic-Compound
dc.subjectCapacitance-Voltage
dc.subjectSchottky Diode
dc.subjectPhotovoltaic Properties
dc.subjectDevices
dc.subjectBarrier
dc.subjectContacts
dc.subjectParameters
dc.subjectFrequency
dc.titleElectrical Characterization of the Boron Trifluoride Doped Poly(3-aminoacetophenone)/p-Si Junction
dc.typeArticle

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