Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorSenkal, B. Filiz
dc.date.accessioned2026-08-12T17:30:08Z
dc.date.issued2008
dc.departmentFırat Üniversitesi
dc.description.abstractThe charge transport properties of polyaniline including boron (PANI-B)/p-type silicon diode have been investigated. The current-voltage characteristics of the device have been investigated under white and ultraviolet light illuminations. Electronic parameters such as the barrier height. diode ideality factor and series resistance, were determined from the current-voltage (I-V) characteristics in the dark of the device and were found to be 0.81 eV, 3.58 and 1.67 x 10(6) Omega. respectively. The photocurrent for the device was found to be 0.857 mu A. The open circuit voltage (V-proportional to = 119.6 mV) under UV illumination is higher than that of the open circuit voltage under (V-proportional to = 57.6 mV) white light illumination, although the intensity of the UV light has lower value. The obtained photovoltaic results suggest that the polyaniline including boron/p-type silicon device can be used as a sensor in optical applications. (C) 2008 Elsevier B.V. All rights reserved.
dc.description.sponsorshipNational Boron Research Institute (BOREN) [BOREN-2006-26-C25-19]
dc.description.sponsorshipThis work was supported by the National Boron Research Institute (BOREN) (Project Number: BOREN-2006-26-C25-19). Authors wish to thank BOREN.
dc.identifier.doi10.1016/j.synthmet.2008.05.011
dc.identifier.endpage825
dc.identifier.issn0379-6779
dc.identifier.issue21-24
dc.identifier.orcid0000-0002-1616-6828
dc.identifier.scopus2-s2.0-57649231842
dc.identifier.scopusqualityQ1
dc.identifier.startpage821
dc.identifier.urihttps://doi.org/10.1016/j.synthmet.2008.05.011
dc.identifier.urihttps://hdl.handle.net/11508/55968
dc.identifier.volume158
dc.identifier.wosWOS:000262573900007
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSynthetic Metals
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectDiode
dc.subjectOrganic layer
dc.subjectPhotovoltaic properties
dc.titleElectrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications
dc.typeArticle

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