Photosensitivity n-channel ZnO phototransistor for optoelectronic applications: Modeling of ZnO TFT

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dc.contributor.authorYakuphanoğlu, Fahrettin
dc.contributor.authorMansouri, S.
dc.date.accessioned2026-08-12T17:14:42Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractThe zinc oxide semiconductor thin film transistor was fabricated on a SiO2/Si substrate by sol gel method. The ZnO film is consisted of nanofibers with the changing diameter along the fibers. Electrical characteristics of the zinc oxide transistor under dark and white light illuminations were analyzed. The mobility value of the ZnO TFT was found to be 1.86 x 10(-2) cm(2)/V s. The ZnO thin film transistor works in an n-channel operational mode because the drain current increases with the positive gate voltages. A significant increase in the drain current of ZnO TFT is observed with a maximum photosensitivity of 100 under visible light illumination. It is concluded that the ZnO thin film transistor can be used in visible photo-detecting device applications. (C) 2011 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipTurkish Scientific and Technological Research Council of Turkey (TUBITAK) [110T047]
dc.description.sponsorshipThis work was supported by the Turkish Scientific and Technological Research Council of Turkey (TUBITAK) (Project No.110T047). The author is thankful to The Scientific and Technological Research Council of Turkey.
dc.identifier.doi10.1016/j.microrel.2011.06.007
dc.identifier.endpage2204
dc.identifier.issn0026-2714
dc.identifier.issue12
dc.identifier.orcid0000-0001-5394-3174
dc.identifier.scopus2-s2.0-81855221842
dc.identifier.scopusqualityQ2
dc.identifier.startpage2200
dc.identifier.urihttps://doi.org/10.1016/j.microrel.2011.06.007
dc.identifier.urihttps://hdl.handle.net/11508/51935
dc.identifier.volume51
dc.identifier.wosWOS:000298721500030
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofMicroelectronics Reliability
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectThin-Film Transistors
dc.subjectSemiconductor
dc.subjectFabrication
dc.titlePhotosensitivity n-channel ZnO phototransistor for optoelectronic applications: Modeling of ZnO TFT
dc.typeArticle

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