Photoresponse and electrical properties of Al/nanostructure NiFe2O4/p-Si/Al photodiode

Basit Öğe Kaydı
dc.contributor.authorCavas, M.
dc.contributor.authorAlahmed, Z. A.
dc.contributor.authorAlbrithen, H. A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:32:17Z
dc.date.issued2014
dc.departmentFırat Üniversitesi
dc.description.abstractThe electrical characterization of Al/NiFe2O4/p-Si/Al photodiode was investigated by current-voltage and capacitance-voltage characteristics. The barrier height and ideality factor magnitudes of the Al/NiFe2O4/p-Si/Al diode were found to be 0.82 and 5.2 eV, respectively. The optical properties of the NiFe2O4 film have been investigated and the optical band gap was found to be 2.66 eV. The photoresponse results indicate that the diode exhibits a photodiode behavior, and the photocurrent of the diode increases by increasing illumination intensity. The density of interface states of the diode was determined by conductance method. The obtained results show that the series resistance of the diode is decreased with increasing frequency. The obtained results indicate that NiFe2O4 spine oxide material can be used in diode applications.
dc.description.sponsorshipResearch Center, College of Science, King Saud University
dc.description.sponsorshipThis project was supported by the Research Center, College of Science, King Saud University.
dc.identifier.doi10.1007/s10832-013-9862-4
dc.identifier.endpage168
dc.identifier.issn1385-3449
dc.identifier.issn1573-8663
dc.identifier.issue2.Mar
dc.identifier.orcid0000-0002-0130-1644
dc.identifier.orcid0000-0001-7304-8118
dc.identifier.orcid0000-0001-6326-3359
dc.identifier.scopus2-s2.0-84904596609
dc.identifier.scopusqualityQ2
dc.identifier.startpage163
dc.identifier.urihttps://doi.org/10.1007/s10832-013-9862-4
dc.identifier.urihttps://hdl.handle.net/11508/56569
dc.identifier.volume32
dc.identifier.wosWOS:000339721700005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Electroceramics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectPhoto diode
dc.subjectSchottky diode
dc.subjectNanomaterial
dc.subjectSol gel method
dc.titlePhotoresponse and electrical properties of Al/nanostructure NiFe2O4/p-Si/Al photodiode
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu