Electrical and optical properties of ZnO-Fe2O 3-SiO2 composite prepared by SOL-GEL method

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dc.contributor.authorCanbay, C. Aksu
dc.contributor.authorAltin, S.
dc.contributor.authorAydogdu, A.
dc.contributor.authorAydogdu, Y.
dc.contributor.authorYakinci, E.
dc.date.accessioned2026-08-12T16:09:04Z
dc.date.issued2007
dc.departmentFırat Üniversitesi
dc.description6TH International Conference of the Balkan Physical Union -- 22 August 2006 through 26 August 2007 -- Istanbul
dc.description.abstractThe semiconductor composite was prepared from ZnO, Fe2O 3 and SiO2 transition metal oxides by sol-gel method. The surface morphology of the prepared samples were investigated by scanning electron microscopy (SEM). The activation energies of the samples in the extrinsic and intrinsic regions were found as 0.75 eV and 0.77 eV for ZFS-1 and 0.22 eV and 0.32eV for ZFS-2. The value of the optical band gap of the composite samples were calculated from the absorption coefficient depending on photon energy. The optical band gap of the samples were found as 1.60 eV and 1.70 eV for ZFS-1 and ZFS-2, respectively. © 2007 American Institute of Physics.
dc.identifier.doi10.1063/1.2733154
dc.identifier.endpage298
dc.identifier.issn1551-7616
dc.identifier.scopus2-s2.0-34547488441
dc.identifier.scopusqualityQ4
dc.identifier.startpage297
dc.identifier.urihttps://doi.org/10.1063/1.2733154
dc.identifier.urihttps://hdl.handle.net/11508/41558
dc.identifier.volume899
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofAIP Conference Proceedings
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20260511
dc.subjectActivation energy; Composite; Semiconductor; Transition metal oxides
dc.titleElectrical and optical properties of ZnO-Fe2O 3-SiO2 composite prepared by SOL-GEL method
dc.typeConference Object

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