Threshold voltage under white light illumination of zinc oxide based TFT in saturation regime

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dc.contributor.authorMansouri, S.
dc.contributor.authorBen Mansour, N.
dc.contributor.authorEl Mir, L.
dc.contributor.authorAl-Hartomy, Omar A.
dc.contributor.authorAl Said, Said A. Farha
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T16:36:10Z
dc.date.issued2013
dc.departmentFırat Üniversitesi
dc.description.abstractThe zinc oxide thin film transistor was fabricated on a SiO2/Si substrate by sol gel method. Electrical characteristics of the zinc oxide transistor under various illuminations were analyzed. The apparent shifting in threshold voltage of zinc oxide transistor under light illumination was explained as a result of the superposition of a photo-generated current on the dark current overall biases. Our model has been confirmed by demonstrating that the apparent threshold voltages calculated under different illumination intensities are perfectly matched with the experimental results. The model indicates that there is a photo-current associated with the photo-excitation process in zinc oxide thin-film transistor and the apparent threshold voltage under illumination is not the intrinsic threshold voltage of a device as measured in the dark; instead, it is monotonically shifted from the intrinsic value due to the increase in photo-current. (C) 2013 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipTABUK University [S-0195-1434, S-0196-1434]; Tabuk University; Tunisian Ministry of High Education
dc.description.sponsorshipThis study was supported by TABUK University under projects No:S-0195-1434 and S-0196-1434. Authors thank to Tabuk University for supporting. Also, this work was supported by Tunisian Ministry of High Education.
dc.identifier.doi10.1016/j.spmi.2013.06.022
dc.identifier.endpage20
dc.identifier.issn0749-6036
dc.identifier.orcid0000-0002-5148-627X
dc.identifier.orcid0000-0001-5394-3174
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-84881179258
dc.identifier.scopusqualityN/A
dc.identifier.startpage12
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2013.06.022
dc.identifier.urihttps://hdl.handle.net/11508/45201
dc.identifier.volume62
dc.identifier.wosWOS:000325588700002
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAcademic Press Ltd- Elsevier Science Ltd
dc.relation.ispartofSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectThin-Film Transistors
dc.subjectOrganic Phototransistor
dc.subjectRoom-Temperature
dc.subjectZno
dc.subjectChannels
dc.subjectLayer
dc.titleThreshold voltage under white light illumination of zinc oxide based TFT in saturation regime
dc.typeArticle

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