Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode

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dc.contributor.authorKim, K. S.
dc.contributor.authorGupta, R. K.
dc.contributor.authorChung, G. S.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:46:21Z
dc.date.issued2011
dc.departmentFırat Üniversitesi
dc.description.abstractAu/3C-SiC/p-Si/Al Schottky barrier diode was prepared using atmospheric pressure chemical vapor deposition technique. The device parameters such as barrier height, ideality factor, and series resistance were calculated using current-voltage characteristics, and were found to be 0.44 eV, 1.55, and 1.02 x 10(4) ohm, respectively. The photocapacitive properties of the diode were studied under various illumination intensities. The transient photocapacitance measurements indicate that the capacitance of the Au/3C-SiC/p-Si/Al Schottky diode is very sensitive to illumination. The photocapacitance of the diode increases with increase in illumination intensity. The increase in photocapacitance with increase in illumination intensity suggests that these devices could be utilized as a photocapacitive sensor for optical sensors. (C) 2011 Elsevier B.V. All rights reserved.
dc.description.sponsorshipKing Saud University
dc.description.sponsorshipThe Global Research Network for Electronic Device and Biosensors (GRNEDB) would like to thank King Saud University for supporting of this project.
dc.identifier.doi10.1016/j.jallcom.2011.08.012
dc.identifier.endpage10013
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.issue41
dc.identifier.orcid0000-0001-5355-3897
dc.identifier.scopus2-s2.0-80052966027
dc.identifier.scopusqualityQ1
dc.identifier.startpage10007
dc.identifier.urihttps://doi.org/10.1016/j.jallcom.2011.08.012
dc.identifier.urihttps://hdl.handle.net/11508/61052
dc.identifier.volume509
dc.identifier.wosWOS:000295978500048
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectPoly 3C-SiC
dc.subjectDiode
dc.subjectPhotocapacitance
dc.subjectIdeality factor
dc.subjectBarrier height
dc.titleEffects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode
dc.typeArticle

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