Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode

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dc.contributor.authorImer, A. G.
dc.contributor.authorKaya, E.
dc.contributor.authorDere, A.
dc.contributor.authorAl-Sehemi, A. G.
dc.contributor.authorAl-Ghamdi, A. A.
dc.contributor.authorKarabulut, A.
dc.contributor.authorYakuphanoğlu, Fahrettin
dc.date.accessioned2026-08-12T17:35:31Z
dc.date.issued2020
dc.departmentFırat Üniversitesi
dc.description.abstractIn this study, semiconductor device applications of organic material sunset yellow (SY) (C16H10N2Na2O7S2) has been investigated. The SY thin film was grown onn-Si via spin coating method and theAu/SY/n-Si/Auheterojunction was fabricated. The basic diode parameters of device were determined by the current-voltage (I-V) and capacitance-voltage (C-V) measurements at the room temperature. The values of the ideality factory (n) and barrier height (phi(b)) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (R-s) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linearC(-2)-Vcurves with reverse bias room temperature and difference frequency. Furthermore,I-Vmeasurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.
dc.description.sponsorshipYuzuncu Yil Universty Scientific Research Project Management [FBE-2015-YL347]
dc.description.sponsorshipThe author is gratefully acknowledged to Yuzuncu Yil Universty Scientific Research Project Management for their partial financial support under the contract number FBE-2015-YL347.
dc.identifier.doi10.1007/s10854-020-04029-8
dc.identifier.endpage14673
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue17
dc.identifier.orcid0000-0002-6793-3038
dc.identifier.orcid0000-0002-5409-3770
dc.identifier.scopus2-s2.0-85088568075
dc.identifier.scopusqualityQ2
dc.identifier.startpage14665
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04029-8
dc.identifier.urihttps://hdl.handle.net/11508/57574
dc.identifier.volume31
dc.identifier.wosWOS:000553322800003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WoS_20260511
dc.subjectN-Type Silicon/Metal
dc.subjectI-V-T
dc.subjectInterface Control
dc.subjectSunset Yellow
dc.subjectJunction
dc.subjectSemiconductor
dc.subjectNanoparticles
dc.subjectTemperature
dc.subjectPhotodiode
dc.subjectMechanism
dc.titleIllumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode
dc.typeArticle

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